BSC020N03MSG MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3M
| Infineon |
| Product Category: | MOSFET |
| RoHS: | Details |
| Si |
| SMD/SMT |
| TDSON-8 |
| N-Channel |
| 1 Channel |
| 30 V |
| 25 A |
| 1.7 mOhms |
| - 20 V, + 20 V |
| 1 V |
| 60 nC |
| - 55 C |
| + 150 C |
| 96 W |
| Enhancement |
| OptiMOS |
| OptiMOS 3M |
| Reel |
| Cut Tape |
| MouseReel |
| Brand: | Infineon Technologies |
| Configuration: | Single |
| Fall Time: | 14 ns |
| Forward Transconductance - Min: | 60 S |
| Height: | 1.27 mm |
| Length: | 5.9 mm |
| Product Type: | MOSFET |
| Rise Time: | 14 ns |
| Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 36 ns |
| Typical Turn-On Delay Time: | 27 ns |
| Width: | 5.15 mm |
| Unit Weight: | 0.003880 oz |
Description
The BSC020N03MSG is a power MOSFET component manufactured by Infineon Technologies AG .
It is part of the OptiMOS M-Series Power-MOSFET family. MOSFETs (Metal-Oxide-Semiconductor
Field-Effect Transistors) are widely used in power electronics for switching applications.
Features
•Optimizedfor5Vdriverapplication(Notebook,VGA,POL)
•LowFOMSWforHighFrequencySMPS
•100%Avalanchetested
•N-channel
•Verylowon-resistanceRDS(on)@VGS=4.5V
•ExcellentgatechargexRDS(on)product(FOM)
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Superiorthermalresistance
•Pb-freeplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
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Optimized for 5V driver applications such as notebooks, VGA, and POL (Point of Load)
-
Low FOMSW (Figure of Merit for Switching) for high-frequency SMPS (Switched-Mode Power Supplies)
-
100% avalanche tested for reliable performance
-
N-channel MOSFET
-
Very low on-resistance (RDS(on)) at VGS=4.5V
-
Excellent gate charge x RDS(on) product (FOM)
-
Qualified according to JEDEC standards for target applications
-
Package type: PG-TDSON-8
-
Superior thermal resistance for efficient heat dissipation
-
Pb-free plating and RoHS compliant [1].
-
Halogen-free according to IEC61249-2-21
